Palavra-chave: JUNCTIONLESS NANOWIRE TRANSISTORS

ELECTRICAL CHARACTERIZATION ANALOG APPLICATIONS SOI MOSFET MULTIPLE GATE ANALYTICAL MODEL LOW TEMPERATURE CRYOELECTRONICS THRESHOLD VOLTAGE HARMONIC DISTORTION TEMPERATURE ZERO TEMPERATURE COEFFICIENT PARAMETER EXTRACTION TECNOLOGIA SOI NANOTECNOLOGIA THREE-DIMENSIONAL NUMERICAL SIMULATION NANOELECTRONICS LOW-FREQUENCY NOISE MODELING SEMICONDUCTORS SUBSTRATE EFFECT TRAP DENSITY OXIDE CHARGES DOUBLE GATE TRANSISTORS NANOWIRE DYNAMICMODEL SERIES RESISTANCE TRIPLE GATE SHORT-CHANNEL EFFECTS LOW TEMPERATURES SUBSTRATE BIAS DYNAMIC MODEL CONTINUOUS MODEL NANOWIRE-BASED TRANSISTORS MOSFET COMPACT MODELING HIGH TEMPERATURE SOURCE-FOLLOWER OPERATIONAL AMPLIFIER MOBILITY TCAD TRIDIMENSIONAL SIMULATION VARIABILITY CRYOGENICS MEASUREMENTS SIMULATION JUNCTIONLESS CAPACITANCE SELF-CASCODE TRANSISTOR MOS DIODE TUNABLE RESISTOR CHARGE DENSITY CORNER EFFECTS SELF-HEATING EFFECT FINFET ULTRA LOW POWER DEVICE EFFECTIVE CHANNEL LENGTH LEAKAGE CURRENT SOURCE/DRAIN ENGINEERING EXTRACTION METHOD CRYSTAL ORIENTATION NUMERICAL SIMULATION DEVICE MEASUREMENTS ACCUMULATIOM-MODE MOBILITY DEGRADATION DEEP-SUBMICROMETER ANALYTICAL CONTINOUS MODEL MULTIPLE-GATE TRANSISTORS PULSED MEASUREMENTS DEVICE PHYSICS TRANSCAPACITANCE DIBL TRANSIENT CMOS CIRCUIT SIMULATOR VERILOG-A FABRICATION PROCESS NOISE MICROELECTRONICS SPICE CURRENT MIRROR SPICE SIMULATION