Palavra-chave: JUNCTIONLESS NANOWIRE TRANSISTORS

ELECTRICAL CHARACTERIZATION SOI MOSFET MULTIPLE GATE ANALOG APPLICATIONS ANALYTICAL MODEL CRYOELECTRONICS LOW TEMPERATURE THRESHOLD VOLTAGE TEMPERATURE HARMONIC DISTORTION ZERO TEMPERATURE COEFFICIENT TECNOLOGIA SOI PARAMETER EXTRACTION NANOTECNOLOGIA THREE-DIMENSIONAL NUMERICAL SIMULATION NANOELECTRONICS LOW-FREQUENCY NOISE MODELING SUBSTRATE EFFECT SEMICONDUCTORS TRAP DENSITY OXIDE CHARGES DOUBLE GATE TRANSISTORS NANOWIRE DYNAMICMODEL TRIPLE GATE SHORT-CHANNEL EFFECTS SERIES RESISTANCE LOW TEMPERATURES SUBSTRATE BIAS DYNAMIC MODEL CONTINUOUS MODEL NANOWIRE-BASED TRANSISTORS MOSFET COMPACT MODELING HIGH TEMPERATURE OPERATIONAL AMPLIFIER SOURCE-FOLLOWER MOBILITY TCAD TRIDIMENSIONAL SIMULATION VARIABILITY CRYOGENICS JUNCTIONLESS SIMULATION MEASUREMENTS CAPACITANCE SELF-CASCODE TRANSISTOR MOS DIODE TUNABLE RESISTOR CHARGE DENSITY CORNER EFFECTS SELF-HEATING EFFECT FINFET ULTRA LOW POWER DEVICE LEAKAGE CURRENT EFFECTIVE CHANNEL LENGTH SOURCE/DRAIN ENGINEERING EXTRACTION METHOD CRYSTAL ORIENTATION DEVICE MEASUREMENTS NUMERICAL SIMULATION ACCUMULATIOM-MODE MOBILITY DEGRADATION DEEP-SUBMICROMETER ANALYTICAL CONTINOUS MODEL MULTIPLE-GATE TRANSISTORS PULSED MEASUREMENTS DEVICE PHYSICS TRANSCAPACITANCE DIBL TRANSIENT VERILOG-A CIRCUIT SIMULATOR CMOS FABRICATION PROCESS NOISE MICROELECTRONICS SPICE CURRENT MIRROR SPICE SIMULATION