Palavra-chave: JUNCTIONLESS NANOWIRE TRANSISTORS

ANALOG APPLICATIONS ELECTRICAL CHARACTERIZATION MULTIPLE GATE SOI MOSFET CRYOELECTRONICS THRESHOLD VOLTAGE LOW TEMPERATURE ANALYTICAL MODEL TEMPERATURE HARMONIC DISTORTION ZERO TEMPERATURE COEFFICIENT TECNOLOGIA SOI PARAMETER EXTRACTION NANOTECNOLOGIA THREE-DIMENSIONAL NUMERICAL SIMULATION LOW-FREQUENCY NOISE NANOELECTRONICS MODELING SEMICONDUCTORS SUBSTRATE EFFECT TRAP DENSITY OXIDE CHARGES DOUBLE GATE TRANSISTORS DYNAMICMODEL NANOWIRE SHORT-CHANNEL EFFECTS TRIPLE GATE SERIES RESISTANCE LOW TEMPERATURES SUBSTRATE BIAS DYNAMIC MODEL CONTINUOUS MODEL MOSFET NANOWIRE-BASED TRANSISTORS COMPACT MODELING HIGH TEMPERATURE OPERATIONAL AMPLIFIER SOURCE-FOLLOWER MOBILITY TCAD TRIDIMENSIONAL SIMULATION VARIABILITY CRYOGENICS SIMULATION JUNCTIONLESS MEASUREMENTS CAPACITANCE SELF-CASCODE TRANSISTOR MOS DIODE TUNABLE RESISTOR CHARGE DENSITY CORNER EFFECTS SELF-HEATING EFFECT FINFET ULTRA LOW POWER DEVICE LEAKAGE CURRENT EFFECTIVE CHANNEL LENGTH SOURCE/DRAIN ENGINEERING EXTRACTION METHOD CRYSTAL ORIENTATION DEVICE MEASUREMENTS NUMERICAL SIMULATION MOBILITY DEGRADATION ACCUMULATIOM-MODE DEEP-SUBMICROMETER ANALYTICAL CONTINOUS MODEL MULTIPLE-GATE TRANSISTORS PULSED MEASUREMENTS DEVICE PHYSICS TRANSCAPACITANCE DIBL TRANSIENT VERILOG-A CIRCUIT SIMULATOR CMOS FABRICATION PROCESS NOISE MICROELECTRONICS SPICE SPICE SIMULATION CURRENT MIRROR