Palavra-chave: NANOWIRE

ANALYTICAL MODEL MODELING EFFECTIVE CHANNEL LENGTH SOI MOSFET PARAMETER EXTRACTION COMPACT MODELING DYNAMIC MODEL NANOWIRE-BASED TRANSISTORS STACKED NANOWIRES SILICON DEEP-SUBMICROMETER TEMPERATURE SELF-HEATING EFFECT MULTIPLE-GATE TRANSISTORS MOSFET ELASTIC ROD MODEL MULTIPLE GATE ELASTIC PROPERTIES SIMULATION ANALOG APPLICATIONS STRAINED DEVICES TCAD TRIDIMENSIONAL SIMULATION CRYOGENICS NANOELECTRONICS QUANTUM EFFECTS YOUNG'S MODULUS CONDUCTANCE TRANSIENT SCALING MOBILITY PIN DIODE FABRICATION PROCESS TRIPLE GATE LOW TEMPERATURES JUNCTIONLESS NANOWIRE TRANSISTORS SILICON GERMANIUM MOBILITY DEGRADATION HARMONIC DISTORTION LOW-FREQUENCY NOISE SERIES RESISTANCE SUBSTRATE BIAS TECNOLOGIA SOI DYNAMICMODEL THREE-DIMENSIONAL NUMERICAL SIMULATION SINW ELECTRICAL CHARACTERIZATION