Palavra-chave: NANOWIRE

STACKED NANOWIRES FABRICATION PROCESS SERIES RESISTANCE JUNCTIONLESS NANOWIRE TRANSISTORS MULTIPLE-GATE TRANSISTORS MULTIPLE GATE TCAD TRIDIMENSIONAL SIMULATION QUANTUM EFFECTS MOSFET DYNAMICMODEL CRYOGENICS NANOELECTRONICS EFFECTIVE CHANNEL LENGTH LOW-FREQUENCY NOISE SCALING ANALOG APPLICATIONS SUBSTRATE BIAS STRAINED DEVICES COMPACT MODELING SELF-HEATING EFFECT SILICON ELASTIC ROD MODEL TECNOLOGIA SOI NANOWIRE-BASED TRANSISTORS MOBILITY YOUNG'S MODULUS PIN DIODE SINW SILICON GERMANIUM PARAMETER EXTRACTION ANALYTICAL MODEL TRANSIENT SIMULATION DEEP-SUBMICROMETER LOW TEMPERATURES TEMPERATURE TRIPLE GATE HARMONIC DISTORTION DYNAMIC MODEL MOBILITY DEGRADATION ELASTIC PROPERTIES CONDUCTANCE ELECTRICAL CHARACTERIZATION THREE-DIMENSIONAL NUMERICAL SIMULATION MODELING SOI MOSFET