Palavra-chave: NANOWIRE

QUANTUM EFFECTS STRAINED DEVICES MOBILITY DEGRADATION SOI MOSFET LOW TEMPERATURES SUBSTRATE BIAS CRYOGENICS COMPACT MODELING NANOELECTRONICS PIN DIODE ELASTIC PROPERTIES MULTIPLE GATE NANOWIRE-BASED TRANSISTORS TCAD TRIDIMENSIONAL SIMULATION ELASTIC ROD MODEL SELF-HEATING EFFECT SIMULATION TEMPERATURE HARMONIC DISTORTION TECNOLOGIA SOI SERIES RESISTANCE ELECTRICAL CHARACTERIZATION STACKED NANOWIRES TRANSIENT ANALOG APPLICATIONS DEEP-SUBMICROMETER YOUNG'S MODULUS DYNAMIC MODEL FABRICATION PROCESS EFFECTIVE CHANNEL LENGTH PARAMETER EXTRACTION MOSFET ANALYTICAL MODEL TRIPLE GATE SINW CONDUCTANCE JUNCTIONLESS NANOWIRE TRANSISTORS MULTIPLE-GATE TRANSISTORS LOW-FREQUENCY NOISE SILICON GERMANIUM MOBILITY SCALING MODELING SILICON DYNAMICMODEL THREE-DIMENSIONAL NUMERICAL SIMULATION