Palavra-chave: NANOELECTRONICS

STACKED NANOWIRES SUBSTRATE BIAS MOSFET ROTATED SUBSTRATE MODELING SINW TEMPERATURE SOURCE-FOLLOWER SIMULATION JUNCTIONLESS CRYOELECTRONICS STRAINED DEVICES MULTIPLE GATE NUMERICAL SIMULATION ANALYTICAL MODEL NANOWIRE PARAMETER EXTRACTION LOW TEMPERATURE SELF-CASCODE TRANSISTOR HIGH TEMPERATURE MOBILITY MOBILITY DEGRADATION JUNCTIONLESS NANOWIRE TRANSISTORS SILICON THREE-DIMENSIONAL NUMERICAL SIMULATION SELF-HEATING EFFECT THRESHOLD VOLTAGE NANOWIRE-BASED TRANSISTORS ELECTRICAL CHARACTERIZATION ULTRA LOW POWER DEVICE TUNABLE RESISTOR ORGANIC THIN FILM TRANSISTORS CHARGE DENSITY SUBSTRATE EFFECT SOI MOSFET TRANSIENT HARMONIC DISTORTION FINFET EFFECTIVE CHANNEL LENGTH LOW-FREQUENCY NOISE SEMICONDUCTORS ORGANIC SEMICONDUCTORS SCALING JUNCTIONLESS TRANSISTOR DOUBLE GATE TRANSISTORS DYNAMICMODEL MICROELECTRONICS ORGANIC LIGHT-EMITTING DIODES CORNER EFFECTS MICROCONTACT PRINTING SERIES RESISTANCE MOS DIODE LEAKAGE CURRENT ANALOG APPLICATIONS LOW TEMPERATURES