Palavra-chave: NANOELECTRONICS

LEAKAGE CURRENT SUBSTRATE BIAS SOI MOSFET LOW TEMPERATURES STRAINED DEVICES MOBILITY DEGRADATION LOW TEMPERATURE SELF-CASCODE TRANSISTOR ORGANIC THIN FILM TRANSISTORS HIGH TEMPERATURE ULTRA LOW POWER DEVICE MULTIPLE GATE JUNCTIONLESS NANOWIRE-BASED TRANSISTORS SELF-HEATING EFFECT SIMULATION TEMPERATURE HARMONIC DISTORTION ORGANIC SEMICONDUCTORS SERIES RESISTANCE ELECTRICAL CHARACTERIZATION STACKED NANOWIRES TRANSIENT ANALOG APPLICATIONS MOS DIODE SOURCE-FOLLOWER EFFECTIVE CHANNEL LENGTH ORGANIC LIGHT-EMITTING DIODES PARAMETER EXTRACTION MOSFET ANALYTICAL MODEL DOUBLE GATE TRANSISTORS SUBSTRATE EFFECT SINW JUNCTIONLESS NANOWIRE TRANSISTORS LOW-FREQUENCY NOISE CRYOELECTRONICS NANOWIRE CHARGE DENSITY JUNCTIONLESS TRANSISTOR NUMERICAL SIMULATION CORNER EFFECTS ROTATED SUBSTRATE MOBILITY SCALING MODELING MICROCONTACT PRINTING TUNABLE RESISTOR SILICON MICROELECTRONICS SEMICONDUCTORS DYNAMICMODEL THRESHOLD VOLTAGE THREE-DIMENSIONAL NUMERICAL SIMULATION FINFET