Palavra-chave: NANOELECTRONICS

LOW TEMPERATURE ANALYTICAL MODEL JUNCTIONLESS TRANSISTOR MODELING EFFECTIVE CHANNEL LENGTH SOI MOSFET PARAMETER EXTRACTION NANOWIRE-BASED TRANSISTORS ORGANIC LIGHT-EMITTING DIODES ROTATED SUBSTRATE STACKED NANOWIRES NUMERICAL SIMULATION SILICON TEMPERATURE SELF-HEATING EFFECT MICROELECTRONICS MOSFET LEAKAGE CURRENT HIGH TEMPERATURE MULTIPLE GATE SELF-CASCODE TRANSISTOR SIMULATION ANALOG APPLICATIONS MOS DIODE STRAINED DEVICES TUNABLE RESISTOR NANOWIRE SUBSTRATE EFFECT FINFET DOUBLE GATE TRANSISTORS TRANSIENT SCALING MOBILITY ULTRA LOW POWER DEVICE ELECTRICAL CHARACTERIZATION MICROCONTACT PRINTING SINW LOW TEMPERATURES JUNCTIONLESS NANOWIRE TRANSISTORS SEMICONDUCTORS LOW-FREQUENCY NOISE HARMONIC DISTORTION THRESHOLD VOLTAGE JUNCTIONLESS MOBILITY DEGRADATION SERIES RESISTANCE SUBSTRATE BIAS CHARGE DENSITY SOURCE-FOLLOWER ORGANIC SEMICONDUCTORS THREE-DIMENSIONAL NUMERICAL SIMULATION CRYOELECTRONICS DYNAMICMODEL ORGANIC THIN FILM TRANSISTORS CORNER EFFECTS