Palavra-chave: NANOELECTRONICS

STACKED NANOWIRES SEMICONDUCTORS SERIES RESISTANCE MICROCONTACT PRINTING JUNCTIONLESS NANOWIRE TRANSISTORS MULTIPLE GATE SELF-CASCODE TRANSISTOR ORGANIC LIGHT-EMITTING DIODES MOSFET DYNAMICMODEL JUNCTIONLESS ORGANIC SEMICONDUCTORS EFFECTIVE CHANNEL LENGTH LOW-FREQUENCY NOISE ORGANIC THIN FILM TRANSISTORS SCALING ANALOG APPLICATIONS CORNER EFFECTS SUBSTRATE BIAS STRAINED DEVICES SELF-HEATING EFFECT JUNCTIONLESS TRANSISTOR CRYOELECTRONICS MICROELECTRONICS LOW TEMPERATURE ROTATED SUBSTRATE MOS DIODE SILICON DOUBLE GATE TRANSISTORS NANOWIRE-BASED TRANSISTORS MOBILITY CHARGE DENSITY SINW ULTRA LOW POWER DEVICE PARAMETER EXTRACTION ANALYTICAL MODEL TRANSIENT SIMULATION TUNABLE RESISTOR LOW TEMPERATURES TEMPERATURE HARMONIC DISTORTION SOURCE-FOLLOWER MOBILITY DEGRADATION LEAKAGE CURRENT ELECTRICAL CHARACTERIZATION THREE-DIMENSIONAL NUMERICAL SIMULATION NUMERICAL SIMULATION NANOWIRE HIGH TEMPERATURE FINFET MODELING SUBSTRATE EFFECT SOI MOSFET THRESHOLD VOLTAGE