Palavra-chave: FINFET

LOW TEMPERATURE ANALYTICAL MODEL CAPACITANCE SOI MOSFET COMPACT MODELING HIGH-K DIELECTRICS NANOWIRE-BASED TRANSISTORS MONTE CARLO SIMULATION NOISE BUFFER ROTATED SUBSTRATE TEMPERATURE SELF-HEATING EFFECT MULTIPLE-GATE TRANSISTORS MOSFET HIGH TEMPERATURE METAL GATE CRYSTAL ORIENTATION MULTIPLE GATE SIMULATION ROTATED DEVICES ANALOG APPLICATIONS MOS DEVICES STRAIN STRAINED DEVICES CMOS DEVICES NANOELECTRONICS SI NANOWIRE GC SOI MOSFET DOUBLE GATE TRANSISTORS TRANSIENT GATE-ALL-AROUND MOBILITY MOSFET-C FILTERS CORNER EFFECTS TRIPLE GATE DRAIN CURRENT TRAP DENSITY RELIABILITY OPERATIONAL AMPLIFIER JUNCTIONLESS NANOWIRE TRANSISTORS FOCUSED ION BEAM MOBILITY DEGRADATION LOW-FREQUENCY NOISE HARMONIC DISTORTION THRESHOLD VOLTAGE EXTRACTION METHOD JUNCTIONLESS CIRCUIT SIMULATOR MEASUREMENTS SERIES RESISTANCE TITANIUM NITRIDE SOURCE-FOLLOWER QUANTUM CORRECTION CIRCUITOS ANALÓGICOS ELECTRICAL CHARACTERIZATION VOLTAGE GAIN