Palavra-chave: FINFET

STRAINED DEVICES MOBILITY DEGRADATION SOI MOSFET RELIABILITY MOSFET-C FILTERS CIRCUIT SIMULATOR LOW TEMPERATURE COMPACT MODELING NANOELECTRONICS HIGH TEMPERATURE MULTIPLE GATE JUNCTIONLESS NANOWIRE-BASED TRANSISTORS METAL GATE CRYSTAL ORIENTATION SELF-HEATING EFFECT SIMULATION TEMPERATURE MEASUREMENTS HARMONIC DISTORTION SERIES RESISTANCE TITANIUM NITRIDE ELECTRICAL CHARACTERIZATION STRAIN QUANTUM CORRECTION ANALOG APPLICATIONS TRANSIENT SOURCE-FOLLOWER CAPACITANCE EXTRACTION METHOD GC SOI MOSFET NOISE SI NANOWIRE MOSFET TRIPLE GATE BUFFER DOUBLE GATE TRANSISTORS ANALYTICAL MODEL CIRCUITOS ANALÓGICOS TRAP DENSITY JUNCTIONLESS NANOWIRE TRANSISTORS LOW-FREQUENCY NOISE MULTIPLE-GATE TRANSISTORS MONTE CARLO SIMULATION DRAIN CURRENT MOBILITY CORNER EFFECTS ROTATED SUBSTRATE OPERATIONAL AMPLIFIER ROTATED DEVICES VOLTAGE GAIN GATE-ALL-AROUND HIGH-K DIELECTRICS MOS DEVICES CMOS DEVICES THRESHOLD VOLTAGE FOCUSED ION BEAM