Palavra-chave: FINFET

SERIES RESISTANCE JUNCTIONLESS NANOWIRE TRANSISTORS MULTIPLE-GATE TRANSISTORS DRAIN CURRENT MULTIPLE GATE SI NANOWIRE TITANIUM NITRIDE STRAIN VOLTAGE GAIN MOSFET MONTE CARLO SIMULATION JUNCTIONLESS NANOELECTRONICS METAL GATE LOW-FREQUENCY NOISE CAPACITANCE FOCUSED ION BEAM ANALOG APPLICATIONS BUFFER CORNER EFFECTS MOS DEVICES STRAINED DEVICES TRAP DENSITY COMPACT MODELING GC SOI MOSFET SELF-HEATING EFFECT OPERATIONAL AMPLIFIER LOW TEMPERATURE ROTATED SUBSTRATE CMOS DEVICES MEASUREMENTS NANOWIRE-BASED TRANSISTORS MOBILITY RELIABILITY ANALYTICAL MODEL QUANTUM CORRECTION MOSFET-C FILTERS SIMULATION CIRCUITOS ANALÓGICOS TRANSIENT NOISE HARMONIC DISTORTION TRIPLE GATE SOURCE-FOLLOWER MOBILITY DEGRADATION TEMPERATURE SOI MOSFET CIRCUIT SIMULATOR CRYSTAL ORIENTATION ELECTRICAL CHARACTERIZATION GATE-ALL-AROUND HIGH-K DIELECTRICS HIGH TEMPERATURE ROTATED DEVICES EXTRACTION METHOD DOUBLE GATE TRANSISTORS THRESHOLD VOLTAGE