Palavra-chave: CAPACITANCE

TRANSCAPACITANCE JUNCTIONLESS NANOWIRE TRANSISTORS IMPEDANCE SPECTROSCOPY NANOTECNOLOGIA TCAD TRIDIMENSIONAL SIMULATION MOSFET NANOPARTICLES COMPACT MODELING GC SOI MOSFET NANOWIRE-BASED TRANSISTORS MOBILITY SPLIT-CV TECHNIQUE SIMULATION LAYER-BY-LAYER DIELECTRIC PROPERTIES ELECTRICAL CHARACTERIZATION THREE-DIMENSIONAL NUMERICAL SIMULATION FINFET SOI MOSFET SURFACE CHARGE DENSITY