Palavra-chave: CAPACITANCE

SOI MOSFET COMPACT MODELING TRANSCAPACITANCE NANOWIRE-BASED TRANSISTORS TCAD TRIDIMENSIONAL SIMULATION SIMULATION DIELECTRIC PROPERTIES SPLIT-CV TECHNIQUE ELECTRICAL CHARACTERIZATION IMPEDANCE SPECTROSCOPY GC SOI MOSFET NANOPARTICLES MOSFET JUNCTIONLESS NANOWIRE TRANSISTORS LAYER-BY-LAYER NANOTECNOLOGIA MOBILITY SURFACE CHARGE DENSITY THREE-DIMENSIONAL NUMERICAL SIMULATION FINFET