Palavra-chave: CAPACITANCE

DIELECTRIC PROPERTIES SOI MOSFET COMPACT MODELING NANOWIRE-BASED TRANSISTORS SURFACE CHARGE DENSITY NANOPARTICLES NANOTECNOLOGIA MOSFET IMPEDANCE SPECTROSCOPY SIMULATION TRANSCAPACITANCE TCAD TRIDIMENSIONAL SIMULATION FINFET GC SOI MOSFET MOBILITY LAYER-BY-LAYER JUNCTIONLESS NANOWIRE TRANSISTORS SPLIT-CV TECHNIQUE THREE-DIMENSIONAL NUMERICAL SIMULATION ELECTRICAL CHARACTERIZATION