Palavra-chave: THRESHOLD VOLTAGE

VARIABILITY JUNCTIONLESS NANOWIRE TRANSISTORS NANOTECNOLOGIA STRAIN MOSFET NANOSHEET MOSFET SUBTHRESHOLD SLOPE JUNCTIONLESS NANOELECTRONICS EXTRACTION METHOD CRYOELECTRONICS LOW TEMPERATURE MEASUREMENTS TECNOLOGIA SOI DOUBLE GATE TRANSISTORS NANOWIRE-BASED TRANSISTORS PARAMETER EXTRACTION ANALYTICAL MODEL SIMULATION CMOS DEEP-SUBMICROMETER LOW TEMPERATURES VOLTAGE REFERENCE TEMPERATURE TEST CHIP ELECTRICAL CHARACTERIZATION FINFET MODELING SUBSTRATE EFFECT SOI MOSFET