Palavra-chave: MULTIPLE GATE

ELECTRICAL CHARACTERIZATION JUNCTIONLESS NANOWIRE TRANSISTORS ANALOG APPLICATIONS SOI MOSFET SIMULATION NANOELECTRONICS ANALYTICAL MODEL THREE-DIMENSIONAL NUMERICAL SIMULATION SELF-HEATING EFFECT NANOWIRE TEMPERATURE METAL GATE FINFET TRIPLE GATE HIGH-K DIELECTRICS LOW TEMPERATURE EXTRACTION METHOD RELIABILITY JUNCTIONLESS HIGH TEMPERATURE MEASUREMENTS STRAINED DEVICES MODELING SERIES RESISTANCE ROTATED SUBSTRATE LOW-FREQUENCY NOISE MOBILITY DEGRADATION STRAIN MOSFET NUMERICAL SIMULATION