Palavra-chave: MULTIPLE-GATE TRANSISTORS

NANOWIRE SERIES RESISTANCE PARAMETER EXTRACTION MOSFET TRIPLE GATE HARMONIC DISTORTION TEMPERATURE ELECTRICAL CHARACTERIZATION SOI MOSFET MOBILITY EXTRACTION METHOD STACKED NANOWIRES CRYOGENICS NANOWIRE-BASED TRANSISTORS FINFET MOBILITY DEGRADATION ANALOG APPLICATIONS STRAINED DEVICES CRYOELECTRONICS ANALYTICAL CONTINOUS MODEL HIGH TEMPERATURE JUNCTIONLESS NANOWIRE TRANSISTORS LOW-FREQUENCY NOISE SUBSTRATE BIAS SELF-HEATING EFFECT PULSED MEASUREMENTS QUANTUM CORRECTION MONTE CARLO SIMULATION