Palavra-chave: MULTIPLE-GATE TRANSISTORS

SERIES RESISTANCE NANOWIRE PARAMETER EXTRACTION MOSFET TRIPLE GATE TEMPERATURE HARMONIC DISTORTION ELECTRICAL CHARACTERIZATION SOI MOSFET EXTRACTION METHOD STACKED NANOWIRES MOBILITY NANOWIRE-BASED TRANSISTORS CRYOGENICS FINFET MOBILITY DEGRADATION ANALOG APPLICATIONS CRYOELECTRONICS STRAINED DEVICES JUNCTIONLESS NANOWIRE TRANSISTORS ANALYTICAL CONTINOUS MODEL HIGH TEMPERATURE LOW-FREQUENCY NOISE SUBSTRATE BIAS SELF-HEATING EFFECT PULSED MEASUREMENTS MONTE CARLO SIMULATION QUANTUM CORRECTION