Palavra-chave: MULTIPLE-GATE TRANSISTORS

PARAMETER EXTRACTION SERIES RESISTANCE NANOWIRE HARMONIC DISTORTION TEMPERATURE TRIPLE GATE MOSFET ELECTRICAL CHARACTERIZATION STACKED NANOWIRES MOBILITY SOI MOSFET EXTRACTION METHOD CRYOGENICS NANOWIRE-BASED TRANSISTORS MOBILITY DEGRADATION FINFET ANALOG APPLICATIONS STRAINED DEVICES CRYOELECTRONICS JUNCTIONLESS NANOWIRE TRANSISTORS ANALYTICAL CONTINOUS MODEL HIGH TEMPERATURE LOW-FREQUENCY NOISE SUBSTRATE BIAS PULSED MEASUREMENTS SELF-HEATING EFFECT QUANTUM CORRECTION MONTE CARLO SIMULATION