Palavra-chave: MOS DEVICES

SILICON OXYNITRIDE ION IMPLATANTION NO ION IMPLANTATION PLASMA OXIDATION SILICON DIOXIDE DIELECTRIC CONSTANT POLYCRYSTALLINE SIGE ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION HIGH K DIELECTRICS MEMORIA NANO CLUSTER SILICON NANOWIRE MEMS MICROELECTRONICS MICROFABRICATION EDUCATION UNICAMP SECONDARY ION MASS SPECTROMETRY FILMES FINOS RADIATION HARDENING RTP FOCUSED ION BEAM JUNCTIONLESS TITANIUM NITRIDE METAL GATE WORK FUNCTION NH4OH ETCHING TITANIUM OXIDE SILICON CARBIDE HAFINIUM OXIDE ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS) CARBETO DE SI - SIC ISFET TANTALUM NITRIDE FINFET ALUMINUM OXYNITRIDE III-V COMPOUND SEMICONDUCTORS DISPOSITIVOS MOS