Palavra-chave: MOS DEVICES

SILICON OXYNITRIDE ION IMPLATANTION NO ION IMPLANTATION PLASMA OXIDATION DIELECTRIC CONSTANT SILICON DIOXIDE ELECTRON CYCLOTRON RESONANCE PLASMA POLYCRYSTALLINE SIGE CHEMICAL VAPOR DEPOSITION HIGH K DIELECTRICS MEMORIA NANO CLUSTER SILICON NANOWIRE MICROELECTRONICS MEMS MICROFABRICATION UNICAMP EDUCATION FILMES FINOS SECONDARY ION MASS SPECTROMETRY RADIATION HARDENING RTP JUNCTIONLESS FOCUSED ION BEAM TITANIUM NITRIDE METAL GATE WORK FUNCTION NH4OH ETCHING SILICON CARBIDE TITANIUM OXIDE HAFINIUM OXIDE ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS) CARBETO DE SI - SIC ISFET TANTALUM NITRIDE FINFET III-V COMPOUND SEMICONDUCTORS DISPOSITIVOS MOS ALUMINUM OXYNITRIDE