Palavra-chave: MOS DEVICES

ION IMPLATANTION SILICON OXYNITRIDE NO ION IMPLANTATION PLASMA OXIDATION DIELECTRIC CONSTANT SILICON DIOXIDE POLYCRYSTALLINE SIGE ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION HIGH K DIELECTRICS NANO CLUSTER MEMORIA SILICON NANOWIRE MEMS MICROELECTRONICS MICROFABRICATION UNICAMP EDUCATION SECONDARY ION MASS SPECTROMETRY FILMES FINOS RADIATION HARDENING RTP JUNCTIONLESS FOCUSED ION BEAM METAL GATE WORK FUNCTION TITANIUM NITRIDE NH4OH ETCHING TITANIUM OXIDE SILICON CARBIDE HAFINIUM OXIDE ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS) CARBETO DE SI - SIC ISFET TANTALUM NITRIDE FINFET ALUMINUM OXYNITRIDE III-V COMPOUND SEMICONDUCTORS DISPOSITIVOS MOS