Palavra-chave: MOS DEVICES

ION IMPLATANTION SILICON OXYNITRIDE NO ION IMPLANTATION PLASMA OXIDATION SILICON DIOXIDE DIELECTRIC CONSTANT ELECTRON CYCLOTRON RESONANCE PLASMA POLYCRYSTALLINE SIGE CHEMICAL VAPOR DEPOSITION HIGH K DIELECTRICS NANO CLUSTER MEMORIA SILICON NANOWIRE MICROFABRICATION MICROELECTRONICS MEMS EDUCATION UNICAMP FILMES FINOS SECONDARY ION MASS SPECTROMETRY RADIATION HARDENING RTP FOCUSED ION BEAM JUNCTIONLESS METAL GATE WORK FUNCTION TITANIUM NITRIDE NH4OH ETCHING TITANIUM OXIDE SILICON CARBIDE ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS) HAFINIUM OXIDE CARBETO DE SI - SIC PASSIVATION ICP PLASMA ISFET TANTALUM NITRIDE FINFET ALUMINUM OXYNITRIDE DISPOSITIVOS MOS III-V COMPOUND SEMICONDUCTORS SI TENSIONADO