Palavra-chave: MOBILITY DEGRADATION

PARAMETER EXTRACTION SERIES RESISTANCE MOSFET DOUBLE GATE TRANSISTORS ANALYTICAL MODEL FINFET SIMULATION ELECTRICAL CHARACTERIZATION SUBSTRATE BIAS NANOWIRE-BASED TRANSISTORS TCAD TRIDIMENSIONAL SIMULATION MOBILITY CRYOELECTRONICS STACKED NANOWIRES STACKED NANOSHEETS STRAIN CRYSTAL ORIENTATION ANALOG APPLICATIONS NANOELECTRONICS SOI MOSFET MULTIPLE GATE NANOWIRE MULTIPLE-GATE TRANSISTORS JUNCTIONLESS NANOWIRE TRANSISTORS ACCUMULATIOM-MODE THREE-DIMENSIONAL NUMERICAL SIMULATION LOW TEMPERATURE GATE-ALL-AROUND