Palavra-chave: MOBILITY DEGRADATION

SERIES RESISTANCE MOSFET PARAMETER EXTRACTION SIMULATION FINFET DOUBLE GATE TRANSISTORS ANALYTICAL MODEL ELECTRICAL CHARACTERIZATION SUBSTRATE BIAS NANOWIRE-BASED TRANSISTORS TCAD TRIDIMENSIONAL SIMULATION MOBILITY STACKED NANOWIRES CRYOELECTRONICS STACKED NANOSHEETS CRYSTAL ORIENTATION STRAIN ANALOG APPLICATIONS MULTIPLE GATE SOI MOSFET NANOWIRE NANOELECTRONICS MULTIPLE-GATE TRANSISTORS JUNCTIONLESS NANOWIRE TRANSISTORS ACCUMULATIOM-MODE THREE-DIMENSIONAL NUMERICAL SIMULATION LOW TEMPERATURE GATE-ALL-AROUND