Palavra-chave: MOBILITY DEGRADATION

MOSFET PARAMETER EXTRACTION SERIES RESISTANCE SIMULATION DOUBLE GATE TRANSISTORS FINFET ANALYTICAL MODEL ELECTRICAL CHARACTERIZATION TCAD TRIDIMENSIONAL SIMULATION NANOWIRE-BASED TRANSISTORS SUBSTRATE BIAS MOBILITY CRYOELECTRONICS STACKED NANOWIRES STACKED NANOSHEETS CRYSTAL ORIENTATION STRAIN MULTIPLE GATE SOI MOSFET ANALOG APPLICATIONS NANOELECTRONICS NANOWIRE MULTIPLE-GATE TRANSISTORS ACCUMULATIOM-MODE JUNCTIONLESS NANOWIRE TRANSISTORS THREE-DIMENSIONAL NUMERICAL SIMULATION LOW TEMPERATURE GATE-ALL-AROUND