Palavra-chave: THREE-DIMENSIONAL NUMERICAL SIMULATION

JUNCTIONLESS NANOWIRE TRANSISTORS ANALYTICAL MODEL SOI MOSFET NANOTECNOLOGIA SELF-HEATING EFFECT NANOELECTRONICS MULTIPLE GATE NANOWIRE TEMPERATURE ELECTRICAL CHARACTERIZATION CAPACITANCE LOW TEMPERATURE CHARGE DENSITY CORNER EFFECTS TUNABLE RESISTOR HARMONIC DISTORTION MODELING JUNCTIONLESS SOURCE/DRAIN ENGINEERING EFFECTIVE CHANNEL LENGTH SHORT-CHANNEL EFFECTS MOBILITY MOBILITY DEGRADATION SUBSTRATE BIAS NANOWIRE-BASED TRANSISTORS