Palavra-chave: THREE-DIMENSIONAL NUMERICAL SIMULATION

JUNCTIONLESS NANOWIRE TRANSISTORS SOI MOSFET ANALYTICAL MODEL NANOTECNOLOGIA MULTIPLE GATE SELF-HEATING EFFECT NANOWIRE NANOELECTRONICS TEMPERATURE ELECTRICAL CHARACTERIZATION CAPACITANCE LOW TEMPERATURE CHARGE DENSITY CORNER EFFECTS HARMONIC DISTORTION TUNABLE RESISTOR MODELING JUNCTIONLESS EFFECTIVE CHANNEL LENGTH SOURCE/DRAIN ENGINEERING SHORT-CHANNEL EFFECTS MOBILITY MOBILITY DEGRADATION NANOWIRE-BASED TRANSISTORS SUBSTRATE BIAS