Palavra-chave: THREE-DIMENSIONAL NUMERICAL SIMULATION

JUNCTIONLESS NANOWIRE TRANSISTORS SOI MOSFET NANOTECNOLOGIA ANALYTICAL MODEL MULTIPLE GATE SELF-HEATING EFFECT NANOWIRE NANOELECTRONICS TEMPERATURE ELECTRICAL CHARACTERIZATION CAPACITANCE LOW TEMPERATURE CHARGE DENSITY CORNER EFFECTS TUNABLE RESISTOR HARMONIC DISTORTION JUNCTIONLESS MODELING SOURCE/DRAIN ENGINEERING SHORT-CHANNEL EFFECTS EFFECTIVE CHANNEL LENGTH MOBILITY DEGRADATION MOBILITY SUBSTRATE BIAS NANOWIRE-BASED TRANSISTORS