Palavra-chave: TCAD TRIDIMENSIONAL SIMULATION

ELECTRICAL CHARACTERIZATION JUNCTIONLESS NANOWIRE TRANSISTORS COMPACT MODELING NANOWIRE-BASED TRANSISTORS SUBSTRATE BIAS MOBILITY DEGRADATION MOBILITY HIGH TEMPERATURE GATE INDUCED DRAIN LEAKAGE STACKED NANOWIRES SELF-HEATING EFFECT TEMPERATURE SENSOR PIN DIODE ELECTROTHERMAL TCAD SIMULATION DIBL JUNCTIONLESS TRANSISTOR ISFET SENSORS SPLIT-CV TECHNIQUE CAPACITANCE MOSFET NANOWIRE LOW TEMPERATURES CRYOGENICS NANOSHEET MOSFET