Palavra-chave: TCAD TRIDIMENSIONAL SIMULATION

ELECTRICAL CHARACTERIZATION NANOWIRE-BASED TRANSISTORS COMPACT MODELING JUNCTIONLESS NANOWIRE TRANSISTORS SUBSTRATE BIAS MOBILITY DEGRADATION MOBILITY GATE INDUCED DRAIN LEAKAGE HIGH TEMPERATURE STACKED NANOWIRES ELECTROTHERMAL TCAD SIMULATION PIN DIODE TEMPERATURE SENSOR SELF-HEATING EFFECT DIBL SENSORS ISFET JUNCTIONLESS TRANSISTOR SPLIT-CV TECHNIQUE CAPACITANCE MOSFET NANOWIRE CRYOGENICS LOW TEMPERATURES NANOSHEET MOSFET