Palavra-chave: TCAD TRIDIMENSIONAL SIMULATION

ELECTRICAL CHARACTERIZATION NANOWIRE-BASED TRANSISTORS JUNCTIONLESS NANOWIRE TRANSISTORS COMPACT MODELING SUBSTRATE BIAS MOBILITY DEGRADATION MOBILITY GATE INDUCED DRAIN LEAKAGE HIGH TEMPERATURE STACKED NANOWIRES SELF-HEATING EFFECT PIN DIODE ELECTROTHERMAL TCAD SIMULATION TEMPERATURE SENSOR DIBL SENSORS ISFET JUNCTIONLESS TRANSISTOR NANOWIRE MOSFET CRYOGENICS CAPACITANCE SPLIT-CV TECHNIQUE MOSFET NANOWIRE LOW TEMPERATURES NANOSHEET MOSFET