Palavra-chave: TCAD TRIDIMENSIONAL SIMULATION

JUNCTIONLESS NANOWIRE TRANSISTORS ELECTRICAL CHARACTERIZATION COMPACT MODELING NANOWIRE-BASED TRANSISTORS MOBILITY DEGRADATION SUBSTRATE BIAS MOBILITY HIGH TEMPERATURE STACKED NANOWIRES GATE INDUCED DRAIN LEAKAGE ELECTROTHERMAL TCAD SIMULATION PIN DIODE TEMPERATURE SENSOR SELF-HEATING EFFECT DIBL SENSORS JUNCTIONLESS TRANSISTOR ISFET CAPACITANCE SPLIT-CV TECHNIQUE NANOWIRE MOSFET CRYOGENICS LOW TEMPERATURES NANOSHEET MOSFET