Palavra-chave: SERIES RESISTANCE

MOBILITY DEGRADATION SOI MOSFET PIN DIODE NANOELECTRONICS MULTIPLE GATE NANOWIRE-BASED TRANSISTORS PHOTODIODE TEMPERATURE ELECTRICAL CHARACTERIZATION MULTI-EXPONENTIAL DIODE MODEL EXTRACTION METHOD EFFECTIVE CHANNEL LENGTH ANALYTICAL CONTINOUS MODEL SHORT-CHANNEL EFFECTS PARAMETER EXTRACTION MOSFET TRIPLE GATE ANALYTICAL MODEL SUBSTRATE EFFECT JUNCTIONLESS NANOWIRE TRANSISTORS MULTIPLE-GATE TRANSISTORS VARIABILITY NANOWIRE JUNCTIONLESS TRANSISTOR NUMERICAL SIMULATION ORGANIC TRANSISTOR BOTTOM CONTACT TFT TIPS-PENTACENE FINFET