Palavra-chave: SERIES RESISTANCE

ANALYTICAL MODEL JUNCTIONLESS TRANSISTOR EFFECTIVE CHANNEL LENGTH SOI MOSFET PARAMETER EXTRACTION VARIABILITY NANOWIRE-BASED TRANSISTORS NUMERICAL SIMULATION STACKED NANOWIRES ORGANIC TRANSISTOR TEMPERATURE ANALYTICAL CONTINOUS MODEL MULTIPLE-GATE TRANSISTORS MOSFET MULTIPLE GATE TIPS-PENTACENE PHOTODIODE NANOELECTRONICS NANOWIRE SUBSTRATE EFFECT FINFET STACKED NANOSHEETS MULTI-EXPONENTIAL DIODE MODEL PIN DIODE TRIPLE GATE JUNCTIONLESS NANOWIRE TRANSISTORS MOBILITY DEGRADATION EXTRACTION METHOD SHORT-CHANNEL EFFECTS BOTTOM CONTACT TFT ELECTRICAL CHARACTERIZATION