Palavra-chave: SERIES RESISTANCE

NANOWIRE-BASED TRANSISTORS PIN DIODE TRIPLE GATE JUNCTIONLESS NANOWIRE TRANSISTORS NANOWIRE MULTIPLE-GATE TRANSISTORS TEMPERATURE PHOTODIODE NUMERICAL SIMULATION SHORT-CHANNEL EFFECTS ORGANIC TRANSISTOR VARIABILITY TIPS-PENTACENE FINFET ANALYTICAL MODEL JUNCTIONLESS TRANSISTOR ELECTRICAL CHARACTERIZATION NANOELECTRONICS MULTIPLE GATE ANALYTICAL CONTINOUS MODEL MOBILITY DEGRADATION EFFECTIVE CHANNEL LENGTH MULTI-EXPONENTIAL DIODE MODEL PARAMETER EXTRACTION SOI MOSFET EXTRACTION METHOD BOTTOM CONTACT TFT SUBSTRATE EFFECT MOSFET