Palavra-chave: SERIES RESISTANCE

MOSFET ANALYTICAL CONTINOUS MODEL TEMPERATURE EXTRACTION METHOD MULTIPLE GATE NUMERICAL SIMULATION TRIPLE GATE ANALYTICAL MODEL NANOWIRE PARAMETER EXTRACTION MOBILITY DEGRADATION JUNCTIONLESS NANOWIRE TRANSISTORS VARIABILITY BOTTOM CONTACT TFT NANOWIRE-BASED TRANSISTORS ELECTRICAL CHARACTERIZATION SOI MOSFET SUBSTRATE EFFECT EFFECTIVE CHANNEL LENGTH MULTI-EXPONENTIAL DIODE MODEL FINFET SHORT-CHANNEL EFFECTS PHOTODIODE ORGANIC TRANSISTOR JUNCTIONLESS TRANSISTOR MULTIPLE-GATE TRANSISTORS TIPS-PENTACENE NANOELECTRONICS PIN DIODE