Palavra-chave: SERIES RESISTANCE

VARIABILITY ORGANIC TRANSISTOR JUNCTIONLESS NANOWIRE TRANSISTORS MULTIPLE-GATE TRANSISTORS MULTIPLE GATE MOSFET MULTI-EXPONENTIAL DIODE MODEL NANOELECTRONICS BOTTOM CONTACT TFT EFFECTIVE CHANNEL LENGTH EXTRACTION METHOD JUNCTIONLESS TRANSISTOR PHOTODIODE TIPS-PENTACENE NANOWIRE-BASED TRANSISTORS ANALYTICAL CONTINOUS MODEL PIN DIODE PARAMETER EXTRACTION ANALYTICAL MODEL SHORT-CHANNEL EFFECTS TEMPERATURE TRIPLE GATE MOBILITY DEGRADATION ELECTRICAL CHARACTERIZATION NUMERICAL SIMULATION NANOWIRE FINFET SUBSTRATE EFFECT SOI MOSFET