Palavra-chave: LOW-FREQUENCY NOISE

ELECTRICAL CHARACTERIZATION JUNCTIONLESS NANOWIRE TRANSISTORS NANOELECTRONICS TRAP DENSITY ROTATED DEVICES FINFET SUBSTRATE BIAS MODELING NANOWIRE-BASED TRANSISTORS COMPACT MODELING SIMULATION GC SOI MOSFET NOISE STRAINED DEVICES SOI MOSFET NANOTECNOLOGIA MICROELECTRONICS ROTATED SUBSTRATE MULTIPLE GATE GRADED-CHANNEL SOI MOSFET TEMPERATURE SERIES ASSOCIATION ANALOG APPLICATIONS NANOWIRE MULTIPLE-GATE TRANSISTORS MOSFET ANALYTICAL MODEL DEEP-SUBMICROMETER STRAIN TRIPLE GATE PARAMETER EXTRACTION TECNOLOGIA SOI