Palavra-chave: LOW-FREQUENCY NOISE

JUNCTIONLESS NANOWIRE TRANSISTORS ELECTRICAL CHARACTERIZATION NANOELECTRONICS TRAP DENSITY FINFET ROTATED DEVICES SUBSTRATE BIAS MODELING NANOWIRE-BASED TRANSISTORS COMPACT MODELING NOISE GC SOI MOSFET SIMULATION SOI MOSFET STRAINED DEVICES NANOTECNOLOGIA MICROELECTRONICS ROTATED SUBSTRATE MULTIPLE GATE GRADED-CHANNEL SOI MOSFET TEMPERATURE SERIES ASSOCIATION ANALOG APPLICATIONS NANOWIRE MOSFET MULTIPLE-GATE TRANSISTORS ANALYTICAL MODEL DEEP-SUBMICROMETER TRIPLE GATE STRAIN TECNOLOGIA SOI PARAMETER EXTRACTION