Palavra-chave: LOW-FREQUENCY NOISE

ELECTRICAL CHARACTERIZATION JUNCTIONLESS NANOWIRE TRANSISTORS NANOELECTRONICS TRAP DENSITY FINFET ROTATED DEVICES SUBSTRATE BIAS NANOWIRE-BASED TRANSISTORS MODELING COMPACT MODELING NOISE SIMULATION GC SOI MOSFET STRAINED DEVICES SOI MOSFET NANOTECNOLOGIA MICROELECTRONICS ROTATED SUBSTRATE MULTIPLE GATE GRADED-CHANNEL SOI MOSFET TEMPERATURE ANALOG APPLICATIONS SERIES ASSOCIATION MOSFET NANOWIRE MULTIPLE-GATE TRANSISTORS ANALYTICAL MODEL DEEP-SUBMICROMETER TRIPLE GATE STRAIN TECNOLOGIA SOI PARAMETER EXTRACTION