Palavra-chave: LOW-FREQUENCY NOISE

NANOELECTRONICS JUNCTIONLESS NANOWIRE TRANSISTORS ELECTRICAL CHARACTERIZATION TRAP DENSITY FINFET ROTATED DEVICES SUBSTRATE BIAS MODELING NANOWIRE-BASED TRANSISTORS COMPACT MODELING NOISE GC SOI MOSFET SIMULATION SOI MOSFET STRAINED DEVICES NANOTECNOLOGIA MICROELECTRONICS ROTATED SUBSTRATE MULTIPLE GATE TEMPERATURE GRADED-CHANNEL SOI MOSFET SERIES ASSOCIATION ANALOG APPLICATIONS MULTIPLE-GATE TRANSISTORS NANOWIRE MOSFET ANALYTICAL MODEL DEEP-SUBMICROMETER TRIPLE GATE STRAIN PARAMETER EXTRACTION TECNOLOGIA SOI