Palavra-chave: ION IMPLANTATION

ANNEALING SILICON DIOXIDE OPTICAL GAP RTA ELECTRICAL RESISTIVITY MOLECULAR STRUCTURE BENZENE PLASMA POLYMER REFRACTIVE INDEX ELECTRICAL CONDUCTIVITY INFRARED SPECTROSCOPY NITROGEN ION CARBON NITRIDE FILM NITRIDING GLOW DISCHARGE ARGON ION ACTIVATION THIN FILM GAAS ACETYLENE MESFET X-RAY DIFFRACTION NANOCLUSTER GE DIELECTRIC CONSTANT HEXAMETIL-DISILOXANO FILMES FINOS